Spontaneous generation of athermal phonon bursts within bulk silicon causing excess noise, low energy background events and quasiparticle poisoning in superconducting sensors
C.L. Chang, Y.-Y. Chang, M. Garcia-Sciveres, W. Guo, S.A. Hertel, X. Li, J. Lin, M. Lisovenko, R. Mahapatra, W. Matava, D.N. McKinsey, P.K. Patel, B. Penning, M. Platt, M. Pyle, Y. Qi, M. Reed, I. Rydstrom, R.K. Romani, B. Sadoulet, B. Serfass, P. Sorensen, B. Suerfu, V. Velan

TL;DR
This study investigates athermal phonon bursts in silicon detectors, revealing their bulk substrate origin, their impact on detector noise and resolution, and potential effects on superconducting qubits, with implications for dark matter and neutrino detection.
Contribution
The paper demonstrates that bulk silicon substrates are the primary source of phonon bursts affecting detector noise and resolution, providing new insights into background sources in solid state phonon detectors.
Findings
Phonon bursts scale linearly with substrate thickness.
The energy scale of sub-threshold noise events is approximately 0.68 meV.
Achieved a world-leading energy resolution of 258.5 meV.
Abstract
Solid state phonon detectors used in the search for dark matter and coherent neutrino nucleus interactions (CENS) require excellent energy resolution (eV-scale or below) and low backgrounds. An unknown source of phonon bursts, the low energy excess (LEE), dominates other above-threshold backgrounds and generates excess shot noise from sub-threshold bursts. In this paper, we measure these phonon bursts for 12 days after cooldown in two nearly identical 1 cm silicon detectors that differ only in the thickness of their substrate (1 mm vs. 4 mm thick). We find that both the channel-correlated shot noise and near-threshold shared LEE relax with time since cooldown. Additionally, both the correlated shot noise and LEE rates scale linearly with substrate thickness. When combined with previous measurements of other silicon phonon detectors with different substrate geometries and…
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