Shubnikov-de Haas Oscillations in 2D $\text{PtSe}_2$: A fermiological Charge Carrier Investigation

TL;DR

This study investigates charge carriers in 2D PtSe2 using high magnetic field transport measurements, revealing quantum oscillations, Berry phase, and weak antilocalization effects, which are crucial for future spintronic and orbitronic applications.

Contribution

The paper provides detailed characterization of charge carriers in PtSe2, including quantum oscillations, Berry phase, and WAL, offering new insights into its electronic properties for device applications.

Findings

Shubnikov-de Haas oscillations occur in-plane at fields >4.5 T

WAL observed despite presence of magnetic moments

Charge carrier parameters like cyclotron mass and Berry phase determined

Abstract

High magnetic field and low temperature transport is carried out in order to characterize the charge carriers of $\text{PtSe}_2$. In particular, the Shubnikov-de Haas oscillations arising at applied magnetic field strengths $\gtrsim 4.5\,\text{T}$ are found to occur exclusively in plane and emerge at a layer thickness of $\approx 18\,\text{nm}$, increasing in amplitude and decreasing in frequency for thinner $\text{PtSe}_2$ flakes. Moreover, the quantum transport time, Berry phase, Dingle temperature and cyclotron mass of the charge carriers are ascertained. The emergence of weak antilocalization (WAL) lies in contrast to the presence of magnetic moments from Pt vacancies. An explanation is provided on how WAL and the Kondo effect can be observed within the same material. Detailed information about the charge carriers and transport phenomena in $\text{PtSe}_2$ is obtained, which is relevant for the design of prospective spintronic and orbitronic devices and for the realization of orbital Hall effect-based architectures.