Parallel Exploration of the Optoelectronic Properties of (Sb,Bi)(S,Se)(Br,I) Chalcohalides
Rasmus S. Nielsen, \'Angel Labordet \'Alvarez, Axel G. Medaille, Ivan Ca\~no, Alejandro Navarro-G\"uell, Cibr\'an L. \'Alvarez, Claudio Cazorla, David R. Ferrer, Zacharie J. Li-Kao, Edgardo Saucedo, Mirjana Dimitrievska

TL;DR
This study explores the optoelectronic properties of (Sb,Bi)(S,Se)(Br,I) chalcohalides, synthesizing eight compounds and analyzing their carrier dynamics, phonon interactions, and defect structures to guide material optimization for solar energy devices.
Contribution
It introduces a scalable synthesis method and comprehensive analysis of structure-property relations in chalcohalides, advancing their potential for optoelectronic applications.
Findings
Bandgaps from 1.38 to 2.08 eV with sharp PL peaks
Carrier dynamics and electron-phonon interactions significantly affect performance
Solid-solution engineering can tune phonon structures and reduce non-radiative recombination
Abstract
Chalcohalides are an emerging family of semiconductors with irresistible material properties, shaped by the intricate interplay between their unique structural chemistry and vibrational dynamics. Despite their promise for next-generation solar energy conversion devices, their intrinsic optoelectronic properties remain largely unexplored. Here, we focus on the (Sb,Bi)(S,Se)(Br,I) system, a subset of compounds that share the same quasi-1D crystal structure. Using a two-step physical vapor deposition (PVD) process, we synthesize the eight ternary chalcohalide compounds, demonstrating bandgaps ranging from 1.38 to 2.08 eV with sharp, single-component photoluminescence (PL) peaks. In a parallel exploration of carrier dynamics and intrinsic electron-phonon interactions -- comprehensively studied using power-, temperature-dependent, and time-resolved PL measurements -- we map their direct…
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