Combined tight-binding and configuration interaction study of unfolded electronic structure of G-color center in Si
Jakub Valdhans, Petr Klenovsk\'y

TL;DR
This study combines tight-binding and configuration interaction methods to analyze the electronic structure of the G-center in silicon, revealing its potential as a source of single and entangled photons for quantum technologies.
Contribution
It introduces a computational approach that integrates tight-binding and unfolding techniques with configuration interaction to study the G-center's electronic properties.
Findings
Small fine-structure splitting of exciton ground state
Potential of G-center as a single and entangled photon emitter
Effective analysis of various configurations using low-cost computation
Abstract
We have theoretically studied the G-center in bulk silicon material using the empirical tight-binding model for calculations of unfolded band structures with configuration interaction correction for the exciton at point of the Brillouin zone. The G-center in B configuration (emissive) being a candidate structure as the telecom single- and entangled-photon source has two substitutional carbons and one interstitial atom embedded into the bulk in six equally possible configurations. Taking the advantage of the low computation effort of the tight-binding and unfolding approach, it is possible to calculate and analyze the behavior of a variety of the electronic configurations. Our tight-binding model is able to describe not only the behavior of the G-center in the silicon bulk but using the unfolding approach it can also pinpoint the contributions of different elements of the…
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