Topological properties of domain walls in antiferromagnetic topological insulators
Gabriele Naselli, Ion Cosma Fulga

TL;DR
This paper investigates the topological nature of magnetic domain walls in antiferromagnetic topological insulators, revealing how different symmetries lead to distinct gapless states and potential for manipulating topological states.
Contribution
It introduces two tight-binding models for antiferromagnetic topological insulators and analyzes how mirror symmetry affects the topological states at magnetic domain walls.
Findings
Spinful case: mirror Chern number remains invariant under time reversal.
Spinless case: mirror Chern number changes sign, affecting domain wall states.
Domain walls can host chiral edge states or 2D gapless states depending on symmetry.
Abstract
Motivated by the study of stacking faults in weak topological insulators and the observation of magnetic domain walls in MnBiTe, we explore the topological properties of magnetic domain walls in antiferromagnetic topological insulators. We develop two tight-binding models for two different types of antiferromagnetic topological insulators: the first type obtained by adding antiferromagnetic order to a strong topological insulator, and another built from stacked Chern insulating layers with alternating Chern numbers. Both systems are dual topological insulators, i.e. they are at the same time antiferromagnetic and crystalline topological insulators, but differ by the type of mirror symmetry protecting the crystalline phase: spinful versus spinless. We show that in the spinful case the mirror Chern number is invariant under time reversal and that it changes sign in the…
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