Metal oxide decoration on Si-FETs for selective gas sensing at room temperature

TL;DR

This paper introduces a silicon FET-based gas sensor functionalized with CuO, capable of selectively detecting H2S at room temperature with high response and recovery, addressing limitations of traditional chemiresistive sensors.

Contribution

It presents a novel CuO-functionalized Si-FET sensor for room temperature gas detection, offering improved selectivity and stability over existing chemiresistive sensors.

Findings

Effective room temperature H2S detection with high response

Selective detection with rapid response and recovery

Potential for standalone compact electronic nose applications

Abstract

Metal oxide semiconductors have been thoroughly studied for gas sensing applications due to the electrical transduction phenomenon in the presence of gaseous analytes. The chemiresistive sensors prevalent in the applications have several challenges associated with them inclusive of instability, longevity, temperature/humidity sensitivity, and power consumption due to the need of heaters. Herein, we present a silicon field effect transistor-based gas sensor functionalized with CuO. The oxidized Cu thin film acts as a selective room temperature H2S sensor with impressive response and recovery. Using this methodology, we propose a standalone compact enose based on our results for a wide spectrum of gas detection.