Ultraviolet interband plasmonics down to the vacuum UV with ultrathin amorphous silicon nanostructures
Johann Toudert, Rosal\'ia Serna, Javier Mart\'in S\'anchez, Juan I. Larruquert, Lorenzo Calvo-Barrio

TL;DR
This paper demonstrates that ultrathin amorphous silicon nanostructures can support interband plasmonic resonances in the vacuum ultraviolet range, enabling new ultracompact, room-temperature plasmonic devices for various applications.
Contribution
It reveals that amorphous silicon, previously not known for interband plasmonics, can exhibit such properties in the UV range, expanding the material's application scope.
Findings
Optical plasmon resonances in 100-300 nm range in amorphous silicon nanostructures
Resonance spectral shifts depend on nanostructure shape and surrounding matrix
Design of a vacuum ultraviolet ultrathin film absorber with polarization selectivity
Abstract
Silicon dominates electronics, optoelectronics, photovoltaics and photonics thanks to its suitable properties, abundance, and well-developed cost-effective manufacturing processes. Recently, crystalline silicon has been demonstrated to be an appealing alternative plasmonic material, both for the infrared where free-carrier plasmons are enabled by heavy doping, and for the ultraviolet where plasmonic effects are induced by interband transitions. Herein, we demonstrate that nanostructured amorphous silicon exhibits such so-called interband plasmonic properties in the ultraviolet, as opposed to the expectation that they would only arise in crystalline materials. We report optical plasmon resonances in the 100-to-300 nm wavelength range in ultrathin nanostructures. These resonances shift spectrally with the nanostructure shape and the nature of the surrounding matrix, while their field…
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Taxonomy
TopicsPlasmonic and Surface Plasmon Research · Thin-Film Transistor Technologies · Thermal Radiation and Cooling Technologies
