Imaging domain boundaries of rubrene thin crystallites by photoemission electron microscopy
Moha Naeimi, Katharina Engster, Waqas Pervez, Ingo Barke, Sylvia Speller

TL;DR
This study uses photoemission electron microscopy and spectroscopy to analyze the domain boundaries and defect states in rubrene thin crystals, revealing how morphology influences photoemission mechanisms and material quality.
Contribution
It introduces a wavelength-dependent PEEM approach to distinguish crystal morphologies and defect states in organic semiconductor thin films, advancing characterization techniques.
Findings
PEEM images show domain boundary emission indicating trap states.
Different photoemission mechanisms are observed at 2PPE and 1PPE.
Nonlinear photon order reveals morphology-specific emission contributions.
Abstract
The progress of designing organic semiconductors is extensively dependent on the quality of prepared organic molecular assemblies, since the charge transport mechanism is strongly efficient in highly ordered crystals compared to amorphous domains. Here we present a comprehensive photoemission electron microscopy (PEEM) and time-of-flight (TOF) spectroscopic study of rubrene () thin crystals focusing on recently developed orthorhombic crystalline morphologies applied in organic electronic devices. Using femtosecond pulsed lasers with photon energies between 3-6 eV, we explore the interplay between photoemission processes, crystal morphology, and defect states. In a 2-photon photoemission process (2PPE), the PEEM images reveal dominant emission localized at domain boundaries, indicating strong contributions from trap states. In contrast, in 1PPE nm…
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