High Chern Number Quantum Anomalous Hall States in Haldane-Graphene Multilayers

TL;DR

This paper demonstrates how stacking multilayer graphene with a Haldane model layer induces high Chern number quantum anomalous Hall states through topological proximity effects, offering a new approach for realizing such states in graphene systems.

Contribution

It introduces a novel method to achieve high Chern number quantum anomalous Hall states in multilayer graphene via coupling with a Haldane model layer.

Findings

High Chern number states with |C|=N+1 achieved in multilayer graphene.

Topological proximity effect gaps out Dirac points in multilayer graphene.

Provides a practical route for realizing high Chern number quantum anomalous Hall states.

Abstract

We consider a rhombohedral-stacked $N$-layer graphene coupled to a monolayer of Haldane model. We show that high order Dirac points in multilayer graphene can be gapped out by topological proximity effect of the Haldane model layer, leading to total Chern number $|C|=N+1$ quantum anomalous Hall states. This provides a new way to construct high Chern number quantum anomalous Hall states in realistic crystalline graphene systems.