Fundamental Understanding of Exposure and Process Chemistry for Enhanced Lithography and Stability of Metal Oxide Resists

TL;DR

This paper investigates the fundamental chemistry and process parameters affecting metal oxide resist performance in EUV lithography, aiming to understand and reduce critical dimension variation for better manufacturing consistency.

Contribution

It provides a detailed, chemistry-focused analysis of how exposure and process conditions influence image formation in metal oxide resists, using a coordinated spectroscopic approach.

Findings

Exposure dose, bake temperature, and atmospheric species significantly affect image formation.

The study links mechanistic insights to critical dimension variation in MORs.

Deep spectroscopic analysis reveals key factors influencing resist performance.

Abstract

Metal oxide resists (MORs) have shown great promise for high resolution patterning in extreme ultraviolet (EUV) lithography, with potential for integration into high volume manufacturing. However, MORs have recently been shown to exhibit sensitivity to process conditions and environment, leading to critical dimension (CD) variation. While this variation can be reduced with proper process control, there is little knowledge on how these aspects affect the image formation mechanism. To bridge these knowledge gaps, we deploy a coordinated, fundamentals-focused approach to yield deep insights into MOR exposure and process chemistry. Our results on a model MOR, an n-butyl Sn-Oxo system, reveal how parameters such as exposure dose, post-exposure bake temperature, and atmospheric species influence the image formation mechanism. Our results, and the coordinated approach using correlative spectroscopies, provide a strong foundation for understanding the image formation mechanism in MOR materials with potential to link mechanistic aspects to CD variation.