Effect of temperature on 2D terahertz plasmons and electron effective mass in AlGaN/GaN
M. Dub (1, 2), P. Sai (1, 2), D. Yavorskiy (1, 2), Y. Ivonyak (1, 2), P. Prystawko (2), R. Kucharski (2), G. Cywinski (1, 2), W. Knap (1, 2), S. Rumyantsev (2) ((1) CENTERA, CEZAMAT, Warsaw University of Technology, Warsaw, Poland, (2) Institute of High Pressure Physics PAS
TL;DR
This study experimentally investigates how temperature influences 2D terahertz plasmons and electron effective mass in AlGaN/GaN, revealing a redshift in plasmon resonance linked to temperature-dependent electron properties.
Contribution
It provides new experimental insights into the temperature effects on 2D plasmons and confirms the temperature dependence of electron effective mass via cyclotron resonance.
Findings
Resonant plasmon frequency redshifts with increasing temperature
Electron effective mass increases with temperature
Temperature affects electron concentration in AlGaN/GaN
Abstract
The effect of temperature on two-dimensional plasmons in large-area AlGaN/GaN plasmonic crystals was studied experimentally. With the temperature increase the resonant plasmon frequency redshifts due to the strong temperature dependence of the electron effective mass and electron concentration under open to the environment surface of AlGaN. The temperature dependence of electron effective mass is confirmed by the cyclotron resonance measurements.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsGaN-based semiconductor devices and materials · Plasmonic and Surface Plasmon Research · Terahertz technology and applications