All-optical electric field sensing with nanodiamond-doped polymer thin films

TL;DR

This paper demonstrates that photoluminescence from nanodiamond NV centers can be used for all-optical, nanoscale electric field sensing, showing significant PL changes under applied voltages and proposing a charge redistribution model.

Contribution

It introduces a novel all-optical electric field sensing method using nanodiamond-doped polymer films based on NV charge state modulation.

Findings

Over 95% of FNDs show up to 31% increase in NV- PL under voltage.

Electric field sensitivity of a single FND is 19 V/cm/Hz^{1/2}.

PL changes depend on photoexcitation rate and are explained by charge redistribution dynamics.

Abstract

The nitrogen-vacancy (NV) center is a photoluminescent defect in diamond that exists in different charge states, NV$^-$ and NV$^0$, that are sensitive to the NV's nanoscale environment. Here, we show that photoluminescence (PL) from NV centers in fluorescent nanodiamonds (FNDs) can be employed for all-optical voltage sensing based on electric field-induced NV charge state modulation. More than 95% of FNDs integrated into a capacitor device show a transient increase in NV$^-$ PL intensity of up to 31% within 0.1 ms after application of an external voltage, accompanied by a simultaneous decrease in NV$^0$ PL. The change in NV$^-$ PL increases with increasing applied voltage from 0 to 100 V, corresponding to an electric field of 0 to 625 kV cm$^ {-1}$ in our devices. The electric field sensitivity of a single FND is 19 V cm$^{-1}$ Hz$^ {-1/2}$. We investigate the NV charge state photodynamics on the millisecond timescale and find that the change in NV PL strongly depends on the rate of photoexcitation. We propose a model that qualitatively explains the observed changes in NV PL based on an electric field-induced redistribution of photoexcited electrons from substitutional nitrogen defects to NV centers, leading to a transient conversion of NV$^0$ to NV$^-$ centers upon application of an external voltage. Our results contribute to the development of FNDs as reliable, all-optical, nanoscale electric field sensors in solid-state systems.