Unraveling the Reaction Mechanisms in a Chemically Amplified EUV Photoresist from a Combined Theoretical and Experimental Approach
Laura Galleni, Dhirendra P. Singh, Thierry Conard, Geoffrey Pourtois, Paul van der Heide, John Petersen, Kevin M. Dorney, Michiel J. van Setten

TL;DR
This study combines experimental EUV photoemission spectroscopy and first-principles simulations to uncover a novel chemical reaction pathway in EUV photoresists, specifically the breakdown of the photoacid generator, advancing understanding of EUV lithography chemistry.
Contribution
It introduces a combined theoretical and experimental approach to study EUV-induced chemical changes in photoresists, revealing a previously unobserved reaction mechanism.
Findings
EUV-induced breakdown of the photoacid generator was observed.
EUV photoemission spectra linked to PAG degradation.
Combined approach provides insights into chemical dynamics during EUV exposure.
Abstract
Extreme ultraviolet (EUV) lithography has revolutionized high-volume manufacturing of nanoscale components, enabling the production of smaller, denser, and more energy efficient integrated circuit devices. Yet, the use of EUV light results in ionization driven chemistry within the imaging materials of lithography, the photoresists. The complex interplay of ionization, generation of primary and secondary electrons, and the subsequent chemical mechanisms leading to image formation in photoresists has been notoriously difficult to study. In this work, we deploy photoemission spectroscopy with a 92 eV EUV light source combined with first-principles simulations to unravel the chemical changes occurring during exposure in a model chemically amplified photoresist. The results reveal a surprising chemical reaction pathway, namely the EUV-induced breakdown of the photoacid generator (PAG), which…
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