Calculations in Unified theory of the photovoltaic Hall effect by field- and light-induced Berry curvatures
Yuta Murotani, Tomohiro Fujimoto, Ryusuke Matsunaga

TL;DR
This paper develops a unified theoretical framework to describe the photovoltaic Hall effect, incorporating both light-induced Berry curvature and bias electric field effects, clarifying their interplay and geometric origins.
Contribution
It introduces a comprehensive theory that simultaneously accounts for light-induced and electric field-induced mechanisms of the photovoltaic Hall effect in nonmagnetic materials.
Findings
Bias electric field modifies Berry curvature and transition properties.
Electric field-induced Berry curvature contributes to the photovoltaic Hall effect.
The theory distinguishes between mechanisms using density matrix calculations.
Abstract
Photovoltaic Hall effect is an interesting platform of Berry curvature engineering by external fields. Floquet engineering aims at generation of light-induced Berry curvature associated with topological phase transition in solids, which may manifest itself as a light-induced anomalous Hall effect. However, recent studies have pointed out an important role of the bias electric field, which adds a field-induced circular photogalvanic effect to the photovoltaic Hall effect. Except for numerical studies, the two mechanisms have been described by different theoretical frameworks, hindering a coherent understanding. Here, we develop a unified theory of the photovoltaic Hall effect capable of describing both mechanisms on an equal footing. We reveal that the bias electric field alters the interband transition dipole moment, transition energy, and intraband velocity, all contributing to the…
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Taxonomy
TopicsTopological Materials and Phenomena · Graphene research and applications · Chemical and Physical Properties of Materials
