Advancing Antiferromagnetic Nitrides via Metal Alloy Nitridation

TL;DR

This paper presents a new alloy nitridation method to produce high-quality, single-crystal antiferromagnetic nitride thin films, enabling advancements in spintronics and microelectronics with confirmed magnetic properties.

Contribution

It introduces an innovative alloy nitridation technique for synthesizing stable, epitaxial single-crystal nitride films with antiferromagnetic properties, improving fabrication reproducibility.

Findings

Nitridated films exhibit robust antiferromagnetic behavior.

The method achieves high epitaxial quality and structural integrity.

Magnetic imaging confirms zero net magnetic moment.

Abstract

Nitride materials, valued for their structural stability and exceptional physical properties, have garnered significant interest in both fundamental research and technological applications. The fabrication of high-quality nitride thin films is essential for advancing their use in microelectronics and spintronics. Yet, achieving single-crystal nitride thin films with excellent structural integrity remains a challenge. Here, we introduce a straightforward yet innovative metallic alloy nitridation technique for the synthesis of stable single-crystal nitride thin films. By subjecting metal alloy thin films to a controlled nitridation process, nitrogen atoms integrate into the lattice, driving structural transformations while preserving high epitaxial quality. Combining nanoscale magnetic imaging with a diamond nitrogen-vacancy (NV) probe, X-ray magnetic linear dichroism, and comprehensive transport measurements, we confirm that the nitridated films exhibit a robust antiferromagnetic character with a zero net magnetic moment. This work not only provides a refined and reproducible strategy for the fabrication of nitride thin films but also lays a robust foundation for exploring their burgeoning device applications.