Defect engineering and effect of vacancy concentration on the electrochemical performance of V-based MXenes

TL;DR

This study demonstrates that controlled vacancy engineering in V-based MXenes enhances their electrochemical performance, with optimal vacancy levels significantly increasing capacitance and rate capability for energy storage applications.

Contribution

It introduces a top-down method to precisely control vacancy concentrations in V-based MXenes, revealing their impact on electrochemical properties and performance.

Findings

Moderate Cr-induced vacancies improve capacitance and rate performance.

Excessive vacancies lead to performance deterioration and structural instability.

V1.9CTz achieves a capacitance of 760 F g-1, surpassing vacancy-free MXenes.

Abstract

Vacancies play a pivotal role in determining the physical and chemical properties of materials. Introducing vacancies into two-dimensional (2D) materials offers a promising strategy for developing high-performance electrode materials for electrochemical energy storage. Herein, a facile top-down strategy is employed to create V-based MXenes with tunable vacancy concentrations, achieved by designing the precursor (V1-xCrx)2AlC (x=0.05, 0.1, 0.3) MAX phase and precisely controlling the etching process. Systematic investigations reveal that introducing a moderate concentration of Cr-induced vacancies significantly enhances both the capacitance and rate performance of V-based MXenes. Specifically, V1.9CTz achieves a capacitance of 760 F g-1, far exceeding the 420 F g-1 of vacancy-free V2CTz MXene. In contrast, an excessively high vacancy concentration lead to deteriorated electrochemical performance and compromised structural stability. This work illustrates that defect engineering is a powerful approach to tailor the electrochemical properties of MXenes, offering a framework for designing next-generation MXene-based energy storage systems.