Direct integration of atomic precision advanced manufacturing into middle-of-line silicon fabrication
E. M. Anderson, C. R. Allemang, A. J. Leenheer, S. W. Schmucker, J. A. Ivie, D. M. Campbell, W. Lepkowski, X. Gao, P. Lu, C. Arose, T.-M. Lu, C. Halsey, T. D. England, D. R. Ward, D. A. Scrymgeour, S. Misra

TL;DR
This paper presents a novel APAM process integrated into standard silicon transistor manufacturing, enabling atomic-scale doping control compatible with existing fabrication workflows, and demonstrating its potential for new device development.
Contribution
It introduces a compatible APAM process that can be integrated into middle-of-line silicon fabrication, expanding access and enabling new device concepts.
Findings
APAM doping density exceeds solid solubility limit
The process preserves atomic precision while being compatible with manufacturing
APAM module adds resistance without affecting transistor operation
Abstract
Atomic precision advanced manufacturing (APAM) dopes silicon with enough carriers to change its electronic structure and can be used to create novel devices by defining metallic regions whose boundaries have single-atom abruptness. Incompatibility with the thermal and lithography process requirements for gated silicon transistor manufacturing have inhibited exploration of both how APAM can enhance CMOS performance and how transistor manufacturing steps can accelerate the discovery of new APAM device concepts. In this work, we introduce an APAM process that enables direct integration into the middle of a transistor manufacturing workflow. We show that a process that combines sputtering and annealing with a hardmask preserves a defining characteristic of APAM, a doping density far in excess of the solid solubility limit, while trading another, the atomic precision, for compatibility with…
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Taxonomy
TopicsAdvanced Surface Polishing Techniques · Silicon and Solar Cell Technologies · Advancements in Photolithography Techniques
