Defect analysis of the $\beta$- to $\gamma$-Ga$_{2}$O$_{3}$ phase transition
Umutcan Bektas, Maciej O. Liedke, Huan Liu, Fabian Ganss, Maik Butterling, Nico Klingner, Ren\'e H\"ubner, Ilja Makkonen, Andreas Wagner, Gregor Hlawacek

TL;DR
This study comprehensively analyzes the defect dynamics during the ion-irradiation-induced phase transition of gallium oxide from β to γ phase using multiple advanced characterization techniques and DFT calculations.
Contribution
It provides the first visualization of the phase transition with positrons and links defect evolution to phase change and irradiation effects in Ga2O3.
Findings
Reduction in backscattering yield after transition
Decrease in positron trapping centers in γ-Ga2O3
Visualization of phase transition via positron measurements
Abstract
In this study, we investigate the ion-irradiation-induced phase transition in gallium oxide (Ga2O3) from the to the phase, the role of defects during the transformation, and the quality of the resulting crystal structure. Using a multi-method analysis approach including X-ray diffraction (XRD), transmission electron microscopy (TEM), Rutherford backscattering spectrometry in channeling mode (RBS/c), Doppler broadening variable energy positron annihilation spectroscopy (DB-VEPAS) and variable energy positron annihilation lifetime spectroscopy (VEPALS) supported by density functional theory (DFT) calculations, we have characterized defects at all the relevant stages before, during, and after the phase transition. Reduction in backscattering yield was observed in RBS/c spectra after the transition to the phase. This is corroborated by a significant decrease in the…
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Taxonomy
TopicsGa2O3 and related materials · Semiconductor materials and devices
