Understanding Decoherence of the Boron Vacancy Center in Hexagonal Boron Nitride
Andr\'as T\'ark\'anyi, Viktor Iv\'ady

TL;DR
This paper investigates the decoherence mechanisms of the boron vacancy center in hexagonal boron nitride using advanced computational methods, identifying optimal magnetic field conditions to enhance coherence times for quantum sensing applications.
Contribution
It provides a comprehensive analysis of decoherence across various magnetic fields and proposes optimal operational conditions for improved sensor performance.
Findings
Decoherence mechanisms vary across five magnetic field regions.
Optimal magnetic field range identified as 180-350 mT for longest coherence times.
Coherence time can reach 1-20 microseconds, surpassing low-field values.
Abstract
Hexagonal boron nitride (hBN) has emerged as a significant material for quantum sensing, particularly due to its ability to host spin active defects, such as the negatively charged boron vacancy (V center). The optical addressability of the V center and hBN's 2D structure enable high spatial resolution and integration into various platforms. However, decoherence due to the strong magnetic noise in hBN imposes fundamental limitations on the sensitivity of V center-based applications. Understanding the phenomena behind decoherence and identifying parameter settings that provide the highest performance are essential for advancing V sensors. This study employs state-of-the-art computational methods to investigate the decoherence of the V center in hexagonal boron nitride across a wide range of magnetic field values…
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Taxonomy
TopicsBoron and Carbon Nanomaterials Research · MXene and MAX Phase Materials · Semiconductor materials and devices
