Integrated Silicon Nitride Devices via Inverse Design

TL;DR

This paper demonstrates the use of inverse design to create compact, efficient silicon nitride photonic devices, overcoming traditional limitations and enabling high-density integration for advanced optical applications.

Contribution

It introduces inverse-designed freeform SiN devices, achieving significant footprint reduction and demonstrating robustness, thus advancing silicon nitride photonics integration.

Findings

Up to 1200x reduction in device footprint

Maintained large feature sizes of up to 160 nm

Validated design robustness and fabrication repeatability

Abstract

Integrated photonic devices made of silicon nitride (SiN), which can be integrated with silicon-on-insulator and III-V platforms, are expected to drive the expansion of silicon photonics technology. However, the relatively low refractive index contrast of SiN is often considered a limitation for creating compact and efficient devices. Here, we present three freeform SiN devices-a coarse wavelength-division multiplexer, a five-mode mode-division multiplexer, and a polarization beam splitter-while systematically benchmarking both the design capability and the fabrication repeatability and robustness of inverse-designed components. We demonstrate up to a 1200x reduction in footprint while maintaining relatively large minimum feature sizes of up to 160 nm, showing that inverse-designed SiN devices can be as compact as their silicon counterparts. These results enable high-density integration in SiN photonics and pave the way for multidimensional data transmission and quantum applications, as the inverse design technique can be applied to different SiN thicknesses and is potentially extendable to other low- and mid-index platforms.