Interfacial superconductivity in Cu/Cu$_{\rm{2}}$O and its effect on shielding ambient electric fields
Dale R. Harshman, Anthony T. Fiory

TL;DR
This paper presents a model for interfacial superconductivity at Cu/Cu$_{ m{2}}$O interfaces, explaining how it influences ambient electric field shielding and correlates with experimental observations of superconductivity and electric field effects.
Contribution
The paper introduces a theoretical model linking interfacial superconductivity to Coulomb interactions and demonstrates its application to experimental electric field shielding phenomena.
Findings
Superconductivity at Cu/Cu$_{ m{2}}$O interfaces with $T_C$ around 7.9 K.
Shielding of electric fields consistent with interfacial superconductivity.
Decrease in superconductivity correlates with helium desorption and reduced charge density.
Abstract
A model is presented for two-dimensional superconductivity at semiconductor-on-metal interfaces mediated by Coulomb interactions between electronically-active interface charges in the semiconductor and screening charges in the metal. The junction considered is native CuO on Cu in which an interfacial double charge layer of areal density , comprising superconducting holes in CuO and mediating electrons in Cu, is induced in proportion to a sub-monolayer of adsorbed atoms. Evidence for superconductivity on copper with prior air exposure is revealed in new analysis of previously published work function data. Based on a theory developed for layered superconductors, the intrinsic transition temperature = / is determined by and transverse distance 2.0 between the charge…
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