Content Addressable Memory Design with Reference Resistor for Improved Search Resolution

TL;DR

This paper introduces a novel reference resistor device that enhances the search resolution of content addressable memories, enabling more precise searches in larger arrays and advanced technology nodes.

Contribution

The work presents an experimental demonstration of a new reference resistor device that improves CAM search resolution to 5 bits or better, compatible with CMOS and beyond-CMOS processes.

Findings

Search resolution improved to ≤5 bits

Experimental validation of the reference resistor device

Compatibility with CMOS and beyond-CMOS technologies

Abstract

Despite the parallel in-memory search capabilities of content addressable memories (CAMs), their use in applications is constrained by their limited resolution that worsens as they are scaled to larger arrays or advanced nodes. In this work we present experimental results for a novel back-end-of-line compatible reference resistive device that can significantly improve the search resolution of CAMs implemented with CMOS and beyond-CMOS technologies to less than or equal to 5-bits.