Hybrid Nonlinear Effects in Photonic Integrated Circuits
Arghadeep Pal, Alekhya Ghosh, Shuangyou Zhang, Toby Bi, Masoud Kheyri,, Haochen Yan, Yaojing Zhang, Pascal Del'Haye

TL;DR
This paper demonstrates hybrid nonlinear effects in photonic integrated circuits by combining materials to enable Raman scattering and Kerr frequency comb generation, expanding functionalities for advanced photonic applications.
Contribution
It introduces a hybrid approach using silicon nitride and fused silica to observe combined Raman and Kerr nonlinearities in integrated photonics, which was not previously achieved.
Findings
Raman lasing observed at 143 mW on-chip power
Broadband Raman-Kerr frequency comb generated
Hybrid nonlinearities enable new integrated photonic functionalities
Abstract
Nonlinear optics in photonic integrated circuits is usually limited to utilizing the nonlinearity of a single material. In this work, we demonstrate the use of hybrid optical nonlinearities that occur in two different materials. This approach allows us to observe combined Raman scattering and Kerr frequency comb generation using silicon nitride (Si3N4) microresonators with fused silica cladding. Here, the fused silica cladding provides Raman gain, while the silicon nitride core provides the Kerr nonlinearity for frequency comb generation. This way we can add Raman scattering to an integrated photonic silicon nitride platform, in which Raman scattering has not been observed so far because of insufficient Raman gain. The Raman lasing is observed in the silica-clad silicon nitride resonators at an on-chip optical power of 143 mW, which agrees with theoretical simulations. This can be…
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Taxonomy
TopicsPhotonic and Optical Devices · Optical Network Technologies · Semiconductor Lasers and Optical Devices
