Tunable resonant Raman scattering with temperature in vertically aligned 2H-SnS2

TL;DR

This study explores how temperature influences resonant Raman scattering and photoluminescence in vertically aligned 2H-SnS2, revealing tunability that could aid in device design.

Contribution

It provides a detailed analysis of temperature-dependent Raman and photoluminescence in 2H-SnS2, demonstrating controllable resonance conditions and excitonic behavior.

Findings

Resonant Raman scattering is tunable with temperature.

Temperature affects the intensity of phonon and excitonic peaks.

Interlayer shear mode shows temperature and laser power dependence.

Abstract

Two-dimensional semiconducting materials have a wide range of applications in various fields due to their excellent properties and rich physics. Here, we report a detailed investigation of the temperature dependent Raman and Photoluminescence measurements on the vertically aligned 2H-SnS2 grown by CVD method. Our results established the tunability of the resonant Raman scattering with varying temperature, i.e. a crossover between resonance and non-resonance conditions for the current system. We also discussed the temperature as well as laser power dependence of the low frequency asymmetric Raman mode which is interlayer shear mode. Temperature dependence of the intensity of the phonon modes also manifests the tunability of the resonant Raman scattering with temperature. Our temperature dependent Photoluminescence measurement shows the strong temperature dependence of the excitonic peaks which is confirmed with laser power dependence of the Photoluminescence measurement at room temperature. Our investigation may help to design and fabricate devices based on vertically aligned 2H-SnS2 and other similar materials in future.