Intrinsic magnetic topological insulators of the MnBi${}_2$Te${}_4$ family
A. Yu. Vyazovskaya, M. Bosnar, E. V. Chulkov, M. M. Otrokov

TL;DR
This review highlights the five-year progress in understanding intrinsic magnetic topological insulators, especially MnBi${}_2$Te${}_4$, focusing on their properties and potential for quantum anomalous Hall and topological magnetoelectric effects.
Contribution
It summarizes recent experimental advances and fundamental properties of MnBi${}_2$Te${}_4$ family, marking significant progress in magnetic topological insulators research.
Findings
MnBi${}_2$Te${}_4$ exhibits intrinsic magnetic topological insulating behavior.
Progress towards higher temperature quantum anomalous Hall effect observed.
Advancements in understanding topological magnetoelectric effects in these materials.
Abstract
This short review appears on the occasion of the fifth anniversary of discovery of intrinsic magnetic topological insulators (MTIs) of the MnBiTe family, which have attracted a great deal of attention recently. This family of materials has been discovered in attempts to increase the observation temperature of the quantum anomalous Hall effect as well as to facilitate the eventual realization of the topological magnetoelectric effect. Therefore, we first briefly introduce these effects, then describe the experimental state-of-the-art in the MTIs field just prior to MnBiTe appearance, after which we discuss the basic properties of this material and its family. Finally, we overview the exciting progress made during five years of intense research in this field.
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