Systematic investigation of the generation of luminescent emitters in hBN via irradiation engineering

TL;DR

This study systematically investigates how irradiation parameters, annealing environment, and hBN quality influence the generation of quantum emitters in hBN, advancing reproducible fabrication methods for quantum technologies.

Contribution

It identifies key processing conditions, such as oxygen irradiation and carbon-rich annealing, that significantly enhance emitter density in hBN.

Findings

High emitter density with oxygen irradiation at 204 eV

Post-annealing in carbon-rich atmospheres increases emitter density

No significant effect of oxygen pre-annealing

Abstract

Hexagonal boron nitride (hBN), a two-dimensional (2D) material, garners interest for hosting bright quantum emitters at room temperature. A great variety of fabrication processes have been proposed with various yields of quantum emitters. In this work, we study the influence of several parameters, such as irradiation energy, annealing environment, and the type of hBN, on the emitter density in hBN. Our results show (i) high emitter density with oxygen irradiation at 204 eV, (ii) post-annealing in carbon-rich atmospheres significantly increases emitter density, reinforcing carbon's potential role, (iii) no significant effect of oxygen pre-annealing, and (iv) a slightly increased emitter density from hBN crystals with lower structural quality. Although the precise origin of the emitters remains unclear, our study shows that oxygen irradiation and subsequent inert annealing in a carbon-rich environment play a crucial role in emitter generation, while the other processing parameters have a smaller influence. As such, our systematic study and findings show relevant advances towards the reproducible formation of visible-frequency quantum emitters in hBN.