Raman Signatures of Single Point Defects in Hexagonal Boron Nitride Quantum Emitters
Chanaprom Cholsuk, Asli Cakan, Volker Deckert, Sujin Suwanna, Tobias, Vogl

TL;DR
This study demonstrates that Raman spectroscopy, combined with density functional theory, can effectively identify and differentiate point defects in hexagonal boron nitride, aiding quantum technology applications.
Contribution
The paper introduces a comprehensive theoretical database of Raman signatures for 100 defects in hBN and proposes Raman spectroscopy as a universal defect identification method.
Findings
Raman signatures are strongly influenced by local atomic environments.
Raman spectroscopy can distinguish defects by their spin, charge states, and strain effects.
The approach enables narrowing down defect candidates for quantum emitters.
Abstract
Point defects in solid-state quantum systems are vital for enabling single-photon emission at specific wavelengths, making their precise identification essential for advancing applications in quantum technologies. However, pinpointing the microscopic origins of these defects remains a challenge. In this work, we propose Raman spectroscopy as a robust strategy for defect identification. Using density functional theory, we systematically characterize the Raman signatures of 100 defects in hexagonal boron nitride (hBN) spanning periodic groups III to VI, encompassing around 30,000 phonon modes. Our findings reveal that the local atomic environment plays a pivotal role in shaping the Raman lineshape, enabling the narrowing of potential defect candidates. Furthermore, we demonstrate that Raman spectroscopy can differentiate defects based on their spin and charge states as well as…
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