Transmission through multiple Mott insulator - semiconductor wells

TL;DR

This paper develops a theoretical framework to analyze quantum transport through layered heterostructures combining semiconductors and Mott insulators, revealing transmission properties and resonance behaviors.

Contribution

It introduces a hierarchical correlation approach to derive quasi-particle solutions and calculates transmission coefficients for complex layered quantum systems.

Findings

Identified transmission bands in semiconductor heterostructures.

Calculated transmittance and resonance energies in Mott insulator-semiconductor layers.

Derived analytical expressions for scattering phase shifts and voltage-induced transmission skewness.

Abstract

Weakly and strongly interacting quantum many-body systems, namely semiconductors and Mott insulators, are combined into a layered heterostructure. Via the hierarchy of correlations, we derive and match the propagating quasi-particle solutions in the different regions and calculate the transmission coefficients through these layered structures. As a proof of principle, we find the well known transmission bands of a semiconductor heterostructure. Extending this idea to semiconductor and Mott insulator structures we calculate the transmittance and the resonance energies. Within a phase accumulation model we find analytical expressions for the scattering phase shift. Lastly, we find transmission curves with skewness for structures with applied voltage.