Effect of a uniaxial strain on optical spin orientation in cubic semiconductors

TL;DR

This study explores how uniaxial strain affects optical spin orientation in cubic semiconductors, revealing universal behaviors and specific dependencies on strain orientation and excitation conditions.

Contribution

It provides a comprehensive analysis of the effects of uniaxial strain on spin polarization, highlighting universal properties and strain-dependent variations in optical transitions.

Findings

Oscillator strengths depend only on strain sign, not magnitude.

Spin polarization from optical transitions is consistently -0.5 for sigma+ excitation.

Spin polarization is unaffected by deformation tensor except for strain along [-110].

Abstract

The effect of a uniaxial strain on the optical spin orientation of a cubic semiconductor is investigated by calculating the valence wavefunctions, the optical oscillator strengths and the initial electron spin polarization for near resonant light excitation from heavy and light valence levels. A strain orientation along the [001], [111] or [-110] crystal direction and a circularly-polarized light excitation parallel or perpendicular to the strain are considered. For all these cases, the total conduction electron spin polarization has a universal character since i) the oscillator strengths do not depend on the magnitude of the strain but only on its sign. ii) Although the oscillator strengths strongly depend on the configuration, the conduction electron spin polarization generated by optical transitions from both the heavy and light valence levels induced by sigma + light excitation is in all cases equal to -0.5 as predicted by the simple atomic model. iii) The spin polarization generated by light excitation from heavy and light valence levels does not depend on the deformation tensor and on the valence deformation potential, except for a strain along [-110].