Quantum geometric moment encodes stacking order of moir\'e matter
Surat Layek, Subhajit Sinha, Atasi Chakraborty, Ayshi Mukherjee, Heena, Agarwal, Kenji Watanabe, Takashi Taniguchi, Amit Agarwal, and Mandar M., Deshmukh

TL;DR
This paper demonstrates how the stacking order in moiré materials, specifically twisted double bilayer graphene, influences quantum geometric properties like Berry curvature and Berry curvature dipole, using nonlinear Hall effect measurements.
Contribution
It provides experimental evidence linking stacking order to quantum geometric quantities in moiré materials, enabling quantum geometry engineering and detection.
Findings
Berry curvature dipole varies with stacking order
Nonlinear Hall effect detects stacking-induced quantum geometry
Valley Chern numbers depend on stacking configuration
Abstract
Exploring the topological characteristics of electronic bands is essential in condensed matter physics. Moir\'e materials featuring flat bands provide a versatile platform for engineering band topology and correlation effects. In moir\'e materials that break either time-reversal symmetry or inversion symmetry or both, electronic bands exhibit Berry curvature hotspots. Different stacking orders in these materials result in varied Berry curvature distributions within the flat bands, even when the band dispersion remains similar. However, experimental studies probing the impact of stacking order on the quantum geometric quantities are lacking. 1.4 twisted double bilayer graphene (TDBG) facilitates two distinct stacking orders (AB-AB, AB-BA) and forms an inversion broken \moire superlattice with electrically tunable flat bands. The valley Chern numbers of the flat bands depend on…
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