Stronger femtosecond excitation causes slower electron-phonon coupling in silicon

TL;DR

This study reveals that increasing femtosecond laser excitation in silicon leads to slower electron-phonon relaxation, implying that lower carrier densities enable faster electronic responses in silicon-based devices.

Contribution

The paper demonstrates experimentally that higher carrier densities slow down electron-phonon coupling in silicon using ultrafast electron diffraction with terahertz pulse compression.

Findings

Electron-phonon decay rate increases with carrier density.

Relaxation time extends from 400 fs to 1.2 ps as density rises.

Hot electron gas quenches phonon scattering in a temperature-dependent manner.

Abstract

Electron-hole pairs in semiconductors are essential for solar cells and fast electronic circuitry, but the competition between carrier transport and relaxation into heat limits the efficiency and speed. Here we use ultrafast electron diffraction with terahertz pulse compression to measure the electron-phonon decay rate in single-crystal silicon as a function of laser excitation strength. We find that the excited electrons relax slower into phonons for higher carrier densities. The electron-phonon scattering rate changes in a nonlinear way from 400 fs at ~$2 \times 10^{20} \text{ cm}^{-3}$ to 1.2 ps at ~$4 \times 10^{20} \text{ cm}^{-3}$. These results indicate that a hot electron gas quenches the scattering into phonons in a temperature-dependent way. Ultrafast electronic circuitry of silicon therefore should work faster and provide higher bandwidths at lower carrier densities.