The Rise of Refractory Transition-Metal Nitride Films for Advanced Electronics and Plasmonics
Jiachang Bi, Ruyi Zhang, Xiong Yao, and Yanwei Cao

TL;DR
This paper reviews recent progress in the epitaxial growth of transition-metal nitride films, highlighting their emergent physical properties and potential applications in advanced electronics and plasmonics.
Contribution
It provides a comprehensive overview of atomic-level epitaxial growth techniques and the physical properties of TMN films, filling a gap in current literature.
Findings
Successful epitaxial growth of high-quality TMN films
Emergent properties like superconductivity and magnetism identified
Potential for advanced electronic and plasmonic devices
Abstract
The advancement of semiconductor materials has played a crucial role in the development of electronic and optical devices. However, scaling down semiconductor devices to the nanoscale has imposed limitations on device properties due to quantum effects. Hence, the search for successor materials has become a central focus in the fields of materials science and physics. Transition-metal nitrides (TMNs) are extraordinary materials known for their outstanding stability, biocompatibility, and ability to integrate with semiconductors. Over the past few decades, TMNs have been extensively employed in various fields. However, the synthesis of single-crystal TMNs has long been challenging, hindering the advancement of their high-performance electronics and plasmonics. Fortunately, progress in film deposition techniques has enabled the successful epitaxial growth of high-quality TMN films. In…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
