Engineering MoS$_2$-MoTe$_2$ Heterojunctions: Enhancing Piezoresponse and Rectification
Sai Saraswathi Yarajena, Akshay K. Naik

TL;DR
This paper demonstrates that lateral heterojunctions of MoS$_2$ and MoTe$_2$ significantly enhance piezoelectric response and rectification, achieving high open-circuit voltages and rectification ratios for energy harvesting applications.
Contribution
It introduces a novel heterojunction device design that improves piezoelectric and rectification performance in 2D materials by leveraging asymmetric contacts and junction potentials.
Findings
Rectification ratio exceeds 5000 without gating
Open-circuit voltages surpass 1V in high junction potential devices
Peak power density reaches 690 mW/m$^2$
Abstract
Piezoelectric materials play a vital role in energy harvesting, piezotronics and various self-powered sensing applications. The piezoelectric strength of 2D materials is limited by the carrier charge screening, leading to reduced open circuit voltages and poor piezotronic performances. Reducing the carrier screening in devices is a key requirement to fully utilize the potential of 2D materials for piezoelectric applications. In this work, we demonstrate that lateral heterojunction devices offer an excellent way to improve the piezoelectric open circuit voltages and rectification ratios. Because of the asymmetric contacts with Nickel (Ni) electrodes, the heterojunctions of monolayer(1L) MoS and MoTe form a hybrid Schottky/p-n diode. We demonstrate a rectification ratio of more than 5000 without electrostatic gating. We observed that devices with higher junction potentials exhibit…
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Taxonomy
Topics2D Materials and Applications · Chemical and Physical Properties of Materials · Advanced Sensor and Energy Harvesting Materials
