Colossal magnetoresistance in a quasi-two-dimensional cluster glass semiconductor

TL;DR

This paper investigates colossal magnetoresistance in a quasi-two-dimensional cluster glass semiconductor, achieved through Te doping in Cr2Se3, revealing significant negative magnetoresistance and magnetic field-induced electronic structure changes.

Contribution

It demonstrates how magnetic frustration via Te doping induces colossal magnetoresistance in a quasi-2D antiferromagnet, combining experimental and theoretical insights.

Findings

Negative magnetoresistance up to 32%

Magnetic field-induced transition from positive to negative resistance anisotropy

Density functional theory supports electronic structure changes

Abstract

With a surge of interest in spintronics, the manipulation and detection of colossal magnetoresistance in quasi-two-dimensional layered magnetic materials have become a key focus, driven by their relatively scarce occurrence compared to giant magnetoresistance and tunneling magnetoresistance. This study presents an investigation into the desired colossal magnetoresistance, achieved by introducing magnetic frustration through Te doping in quasi-two-dimensional antiferromagnet Cr2Se3 matrix. The resulting Cr0.98SeTe0.27 exhibits cluster glass-like behavior with a freezing temperature of 28 K. Magnetotransport studies reveal a significant negative magnetoresistance of up to 32%. Additionally, angle-dependent transport measurements demonstrate a magnetic field-induced transition from positive to negative resistance anisotropy, suggesting a magnetic field-driven alteration in the electronic structure of this narrow band gap semiconductor, a characteristic feature of the colossal magnetoresistance effect. This behavior is further corroborated by density functional theory calculations. This systematic investigation provides a crucial understanding of the control of colossal magnetoresistance in quasi-two-dimensional materials via competing exchange interactions.