Reversible magneto ionics in crystallized W Co20Fe60B20 MgO HfO2 ultra-thin films with perpendicular magnetic anisotropy

TL;DR

This paper explores electric field control of perpendicular magnetic anisotropy in ultra-thin W/CoFeB/MgO/HfO2 films, revealing volatile electrostatic effects in amorphous states and non-volatile magnetoionic effects in crystalline states, advancing magnetic device integration.

Contribution

It demonstrates reversible and non-volatile electric field modulation of PMA in crystalline films via magneto-ionics, a novel approach for magnetic tunnel junctions.

Findings

Volatile E-field effects in amorphous films.

Non-volatile, reversible PMA modulation in crystalline films.

Higher oxygen mobility induces magneto-ionic response.

Abstract

We have investigated electric field (E-field) induced modulation of perpendicular magnetic anisotropy (PMA) in both amorphous and crystalline W/CoFeB/MgO/HfO2 ultra-thin films. We find that in the amorphous state, the E-field effect is volatile and reversible, which is consistent with the conventional electrostatic effect through charge accumulation and depletion. In the crystallized system annealed at 370{\deg}C, we find that two effects are at play, a non-volatile and reversible voltage-induced effect on PMA and an electrostatic response. We discuss these results in terms of higher oxygen mobility at the crystallized CoFeB-MgO interface, which induces a non-volatile magnetoionic response. Modulating PMA in crystallized CoFeB-MgO materials through ionic migration opens the path to integrating magneto-ionics in full magnetic tunnel junctions.