Multifield Induced Antiferromagnet Transformation into Altermagnet and Realized Anomalous Valley Hall Effect in Two-dimensional Materials
Hanbo Sun, Pengqiang Dong, Chao Wu, and Ping Li

TL;DR
This paper demonstrates how to induce altermagnetism and control valley splitting in two-dimensional materials using external fields, Janus structures, and ferroelectric substrates, revealing new avenues for valley physics and spintronic applications.
Contribution
It introduces a method to realize two-dimensional altermagnetism and manipulate valley splitting via physical fields and ferroelectric polarization, expanding understanding of valley physics.
Findings
Monolayer VPSe3 exhibits valley splitting of 2.91 meV.
Electric fields and Janus structures tune valley splitting magnitude and direction.
Ferroelectric polarization switching can control altermagnetic effects and induce anomalous valley Hall effect.
Abstract
Altermagnetism, as a new category of collinear magnetism distinct from traditional ferromagnetism and antiferromagnetism, exhibits the spin splitting without net magnetization. Currently, researchers are focus on searching three-dimensional altermagnetism and exploring its novel physical properties. However, there is a lack of understanding of the physical origin of two-dimensional altermagnetic emergent behavior. Here, we propose an approach to realize the transition from Neel antiferromagnetism to altermagnetism in two-dimensional system using an electric field, Janus structure, and ferroelectric substrate. In monolayer VPSe3, we demonstrate that multiple-physical-fields cause the upper and lower Se atoms unequal to break PT symmetry, resulting in altermagnetic spin splitting. Noted that monolayer VPSe3 produces a spontaneous valley splitting of 2.91 meV at the conduction band…
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Taxonomy
TopicsPhysics of Superconductivity and Magnetism · Magnetic properties of thin films · Theoretical and Computational Physics
