Atomic layer etching of niobium nitride using sequential exposures of O$_2$ and H$_2$/SF$_6$ plasmas

TL;DR

This paper introduces a novel atomic layer etching process for niobium nitride using sequential O$_2$ and H$_2$/SF$_6$ plasma exposures, enabling precise, low-damage etching suitable for superconducting device applications.

Contribution

It presents the first known ALE process for NbN, achieving Angstrom-scale control and low damage, with detailed process parameters and characterization.

Findings

Achieved an etch rate of 1.77 Å/cycle at 125°C.

Demonstrated higher $T_c$ in ALE-etched films compared to RIE-etched films.

Established selective etching of Nb$_2$O$_5$ over NbN using SF$_6$:H$_2$ plasma ratio.

Abstract

Niobium nitride (NbN) is a metallic superconductor that is widely used for superconducting electronics due to its high transition temperature ($T_c$) and kinetic inductance. Processing-induced damage negatively affects the performance of these devices by mechanisms such as microwave surface loss. Atomic layer etching (ALE), with its ability to etch with Angstrom-scale control and low damage, has the potential to address these issues, but no ALE process is known for NbN. Here, we report such a process consisting of sequential exposures of O$_2$ plasma and H$_2$/SF$_6$ plasma. Exposure to O$_2$ plasma rather than O$_2$ gas yields a greater fraction of Nb in the +5 oxidation state, which is then volatilized by NbF$_5$ formation with exposure to an H$_2$/SF$_6$ plasma. The SF$_6$:H$_2$ flow rate ratio is chosen to produce selective etching of Nb$_2$O$_5$ over NbN, enabling self-limiting etching within a cycle. An etch rate of 1.77 \r{A}/cycle was measured at 125 $^\circ$C using ex-situ ellipsometry. The $T_c$ of the ALE-etched film is higher than that of an RIE-etched film of a similar thickness, highlighting the low-damage nature of the process. These findings have relevance for applications of NbN in single-photon detectors and superconducting microresonators.