Electronic and Structural Properties of Lanthanide-Doped MoS$_2$: Impact of Ionic Size and Orbital Configuration Mismatch
Hyosik Kang, Raquel Queiroz, Lukas Muechler

TL;DR
This study uses density functional theory to explore how lanthanide dopants affect the structural and electronic properties of MoS2 monolayers, revealing insights into their potential as infrared single-photon emitters for quantum technologies.
Contribution
It provides a detailed theoretical analysis of lanthanide doping in MoS2, highlighting the role of vacancies in stabilizing dopants and predicting their optical emission properties.
Findings
S vacancies improve thermodynamic stability of doped MoS2
Ce4+ likely does not emit in infrared due to empty f-shell
Er3+ doped MoS2 is predicted to emit in the infrared
Abstract
Single-photon emitters (SPEs) are crucial for quantum technologies such as quantum simulation, secure quantum communication, and precision measurements. Two-dimensional transition metal dichalcogenides (TMDCs) are promising SPE candidates due to their atomically thin nature and efficient photon extraction. However, their emission wavelengths limit compatibility with existing telecommunication technologies. Lanthanide doping in TMDCs, such as \defect{MoS}{2}, offers a potential solution by introducing sharp, -orbital derived emissions in the infrared range. Yet, the feasibility of introducing these dopants remains uncertain due to their large ionic radii of the lanthanides. We employ density functional theory (DFT) calculations to investigate the structural and electronic properties of lanthanide-doped \defect{MoS}{2} monolayers (Ln=Ce, Er). By evaluating formation energies with up to…
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Taxonomy
Topics2D Materials and Applications · Machine Learning in Materials Science · Chalcogenide Semiconductor Thin Films
