Metal-organic chemical vapor deposition of MgSiN$_{2}$ thin films

TL;DR

This study demonstrates the successful growth of high-quality MgSiN₂ thin films via MOCVD, revealing their ultrawide band gap and compatibility with existing nitride materials, opening new avenues for optoelectronic applications.

Contribution

First demonstration of MOCVD growth of MgSiN₂ thin films with controlled crystallinity and ultrawide band gap properties.

Findings

High-quality, single-crystal MgSiN₂ films achieved.

Ultrawide direct band gap measured between 6.13 eV and 6.27 eV.

Growth conditions optimized for film quality and electronic properties.

Abstract

Orthorhombic-structured II-IV nitrides provide a promising opportunity to expand the material platform while maintaining compatibility with the wurtzite crystal structure of the traditional III-nitride material system. Among them, MgSiN$_{2}$ stands out due to its close compatibility with GaN and AlN and its theoretically predicted ultrawide direct band gap of 6.28 eV. In this work, the growth of MgSiN$_{2}$ thin films on GaN-on-sapphire and c-plane sapphire substrates was investigated using metal-organic chemical vapor deposition (MOCVD). MOCVD growth conditions were correlated with film quality and crystallinity for samples grown on GaN-on-sapphire substrates. The effects of Mg:Si precursor molar flow rate ratios and growth pressure at two different temperatures, 745$^{\circ}$C and 850$^{\circ}$C, were studied comprehensively. High-resolution scanning transmission electron microscopy (STEM) imaging confirmed the formation of high-quality, single-crystal MgSiN$_{2}$ films. Optical band gap extraction from transmittance measurements yielded direct band gap values ranging from 6.13 eV to 6.27 eV for samples grown under various conditions, confirming the realization of an ultrawide-band gap, III-nitride-compatible, II-IV-nitride material.