Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects

TL;DR

This paper reveals that in semiconductors with multi-level defects, the carrier recombination rate depends non-linearly on excess carrier density due to the interplay of carrier capture and emission, challenging the traditional ABC model.

Contribution

It introduces the A(n)BC model accounting for nonlinear dependence and emphasizes the importance of including carrier emission in recombination calculations for accuracy.

Findings

Neglecting carrier emission causes underestimation of recombination rates by over 8 orders of magnitude.

Carrier emission significantly influences defect charge-state distribution and recombination rates.

Revisiting previous studies with emission considered is necessary for accurate modeling.

Abstract

The ABC model has been widely used to describe the carrier recombination rate, in which the rate of non-radiative recombination assisted by deep-level defects is assumed to depend linearly on excess carrier density $\Delta n$, leading to a constant recombination coefficient A. However, for multi-level defects that are prevalent in semiconductors, we demonstrate here that the rate should depend nonlinearly on $\Delta n$. When $\Delta n$ varies, the carrier capture and emission of defects can change the defect density distribution in different charge states, which can further change the carrier capture and emission rates of the defects and thus make the recombination rate depend non-linearly on $\Delta n$, leading to an $A(n)$ function. However, in many recent calculation studies on carrier recombination rate of multi-level defects, only carrier capture was considered while carrier emission from defect levels was neglected, causing incorrect charge-state distribution and misleading linear dependence of the rate on $\Delta n$. For $\text{V}_{\text{Ga}}$-$\text{O}_{\text{N}}$ in GaN and $\text{Pb}_\text{I}$ in CsPbI$_3$, our calculations showed that neglecting the carrier emission can cause the recombination rate underestimation by more than 8 orders of magnitude when $\Delta n$ is $10^{15}$ cm$^{-3}$. Our findings suggest that the recent studies on carrier recombination assisted by multi-level defects should be revisited with carrier emission considered, and the widely-used $ABC$ model should be reformed into the $A(n)BC$ model.