Scalable registration of single quantum emitters within solid immersion lenses through femtosecond laser writing

TL;DR

This paper introduces a scalable, marker-free femtosecond laser writing method to precisely register quantum emitters within photonic structures, significantly improving optical efficiency for quantum devices.

Contribution

The authors demonstrate a novel femtosecond laser writing technique for direct, marker-free registration of quantum emitters in photonic structures, enhancing scalability and efficiency.

Findings

Achieved precise placement of quantum emitters with ~260 nm offset

Observed 4.5 times enhancement in optical collection efficiency

Method is scalable and adaptable to various materials

Abstract

The precise registration of solid-state quantum emitters to photonic structures is a major technological challenge for fundamental research (e.g. in cavity quantum electrodynamics) and applications to quantum technology. Standard approaches include the complex multi-step fabrication of photonic structures on pre-existing emitters, both registered within a grid of lithographically-defined markers. Here, we demonstrate a marker-free, femtosecond laser writing technique to generate individual quantum emitters within photonic structures. Characterization of 28 defect centers, laser-written at the centers of pre-existing solid immersion lens structures, showed offsets relative to the photonic structure's center of 260~nm in the x-direction and 60~nm in the y-direction, with standard deviations of $\pm 170$~nm and $\pm 90$~nm, respectively, resulting in an average 4.5 times enhancement of the optical collection efficiency. This method is scalable for developing integrated quantum devices using spin-photon interfaces in silicon carbide and is easily extendable to other materials.