Optimised Design of a Current Mirror in 150 nm GaAs Technology

TL;DR

This paper presents an optimized current mirror design in 150 nm GaAs technology that enhances compactness, energy efficiency, and performance for RF applications, addressing the growing demand for smaller, low-power wireless devices.

Contribution

It introduces a novel high swing current mirror with improved gain, reduced power consumption, and wider bandwidth through advanced transistor sizing and biasing techniques.

Findings

Gain of at least 6.005 dB achieved

Power consumption reduced to 91.17 mW

Bandwidth of 22.60 kHz attained

Abstract

The Current Mirror (CM) is a basic building block commonly used in analogue and mixed-signal integrated circuits. Its significance lies in its ability to replicate and precisely regulate the current, making it crucial in various applications such as amplifiers, filters and data converters. Recently, there has been a growing need for smaller and more energy-efficient Radio Frequency (RF) devices due to the advancements in wireless communication, the Internet of Things (IoT) and portable electronics. This research aims to propose an improved and optimised CM design focusing on compactness and energy-efficient operation. Through a comprehensive methodology involving transistor sizing, biasing techniques, load resistance selection, frequency response stabilisation and noise analysis, the proposed high swing CM design achieves a gain of at least 6.005 dB, a reduced power consumption of 91.17 mW, a wide bandwidth of 22.60 kHz and improved linearity as well as accuracy through precise current matching and minimised mismatch. This optimised CM design will further boost the realisation of compact and lower power RF devices, contributing to the advancement of analogue circuit design techniques and enhancing system performance, accuracy and reliability.