Fast spin precession and strong perpendicular magnetic anisotropy in ferrimagnetic Mn4N thin films improved by Pd buffer layer

TL;DR

This study demonstrates that Pd buffer layers improve the crystalline quality, perpendicular magnetic anisotropy, and enable fast spin precession in Mn4N ferrimagnetic thin films, making them promising for spintronic devices.

Contribution

It reveals that Pd buffer layers significantly enhance the magnetic and structural properties of Mn4N thin films, including achieving near 100 GHz spin precession at room temperature.

Findings

Enhanced crystalline quality and PMA due to Pd buffer layer.

Fast spin precession near 100 GHz at room temperature.

Mn4N thin films show high thermal stability and potential for spintronics.

Abstract

Ferrimagnets take the advantages of both ferromagnets and antiferromagnets making them promise for spintronic applications. Here we prepared ferrimagnetic Mn4N thin films with high Curie temperature and investigated the crystalline structure and magnetic properties affected by the Pd buffer layer. We demonstrated that both crystalline quality and perpendicular magnetic anisotropy (PMA) of Mn4N thin films are enhanced significantly due to the relaxation of tensile stress induced by the Pd buffer layer. We also demonstrated a fast spin precession at room temperature, almost 100 GHz, in Mn4N thin films. With the characteristics of high thermal stability, enhanced PMA by buffer layer and fast spin precession, Mn4N thin film is a promising material for spintronic applications.