Characterization of ion track etched conical nanopores in thermal and PECVD SiO$_{2}$ using small angle X-ray scattering
Shankar Dutt, Rudradeep Chakraborty, Christian Notthoff, Pablo, Mota-Santiago, Christina Trautmann, Patrick Kluth

TL;DR
This study uses small-angle X-ray scattering to analyze and compare the morphology and size distribution of ion track etched conical nanopores in thermal and PECVD SiO$_{2}$, revealing material-dependent differences crucial for nanofluidic applications.
Contribution
It introduces a novel SAXS analysis method for anisotropic nanopores and provides detailed characterization of pore geometry and size distribution in different SiO$_{2}$ materials.
Findings
Thermal SiO$_{2}$ has a narrow size distribution (~2-4%).
PECVD SiO$_{2}$ shows a broader size variation (~8-18%).
Ion energy has negligible effect on pore size in PECVD SiO$_{2}$.
Abstract
Conical nanopores in amorphous SiO thin films fabricated using the ion track etching technique show promising potential for filtration, sensing and nanofluidic applications. The characterization of the pore morphology and size distribution, along with its dependence on the material properties and fabrication parameters, is crucial to designing nanopore systems for specific applications. Here, we present a comprehensive study of track-etched nanopores in thermal and plasma-enhanced chemical vapor deposited (PECVD) SiO using synchrotron-based small-angle X-ray scattering (SAXS). We present a new approach for analyzing the complex highly anisotropic 2-dimensional SAXS patterns of the pores by reducing the analysis to two orthogonal 1-dimensional slices of the data. The simultaneous fit of the data enables an accurate determination of the pore geometry and size distribution. The…
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Taxonomy
TopicsIon-surface interactions and analysis · Nanopore and Nanochannel Transport Studies · Copper Interconnects and Reliability
