Orientation Dependent Resistivity Scaling in Mesoscopic NbP Crystals
Gianluca Mariani, Federico Balduini, Nathan Drucker, Lorenzo Rocchino,, Vicky Hasse, Claudia Felser, Heinz Schmid, Cezar Zota, Bernd Gotsmann

TL;DR
This study investigates how the electrical resistivity of anisotropic NbP crystals varies with orientation at mesoscopic scales, combining experimental measurements and theoretical modeling to assess their potential as future interconnect materials.
Contribution
It introduces a resistivity scaling methodology for anisotropic semimetals like NbP, linking experimental data with Fermi surface theory for interconnect applications.
Findings
Resistivity depends on crystalline orientation in NbP.
Theoretical model correlates Fermi surface features with resistivity.
Method enables evaluation of anisotropic materials for nanoelectronics.
Abstract
The scaling of Si transistor technology has resulted in a remarkable improvement in the performance of integrated circuits over the last decades. However, scaled transistors also require reduced electrical interconnect dimensions, which lead to greater losses and power dissipation at circuit level. This is mainly caused by enhanced surface scattering of charge carriers in copper interconnect wires at dimensions below 30 nm. A promising approach to mitigate this issue is to use directional conductors, i.e. materials with anisotropic Fermi surface, where proper alignment of crystalline orientation and transport direction can minimize surface scattering. In this work, we perform a resistivity scaling study of the anisotropic semimetal NbP as a function of crystalline orientation. We use here focused ion beam to pattern and scale down NbP crystallites to dimensions comparable to the…
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Taxonomy
TopicsSurface and Thin Film Phenomena · Physics of Superconductivity and Magnetism · Superconducting Materials and Applications
