Antiferromagnetic diamond network as an efficient spin filter: Proposition of a spin-specific semi-conducting behavior

TL;DR

This paper introduces a novel antiferromagnetic diamond network that acts as an efficient spin filter and exhibits spin-specific semiconducting behavior, promising advancements in spintronic device design.

Contribution

It proposes the first model of an antiferromagnetic diamond network achieving complete spin polarization and spin-specific semiconducting properties within a tight-binding framework.

Findings

Achieves complete spin polarization over a broad bias window.

Identifies a localized, degenerate energy level coexisting with conducting states.

Enables spin-specific p-type and n-type semiconducting behavior by tuning parameters.

Abstract

We propose, for the first time, that an array of diamond plaquettes, each possessing vanishing net magnetization, can achieve complete spin polarization over a broad bias window. Furthermore, this system can be utilized to realize spin-specific semiconducting behavior. We describe the antiferromagnetic diamond network within a tight-binding framework, where spin-dependent scattering arises due to the interaction between itinerant electrons and local magnetic moments at different lattice sites. The mechanism underlying spin filtration relies on the specific arrangement of magnetic moments within individual plaquettes. We systematically investigate the spin polarization phenomenon under various input conditions, examining its dependence on network size, system temperature, and the magnetic flux threading each plaquette. Due to the network's geometry, we identify a sharply localized, highly degenerate energy level coexisting with conducting states. By tuning physical parameters, a small energy gap can be established between these degenerate localized states and the conducting energy band, enabling spin-specific $p$-type and $n$-type semiconducting behavior. Our findings offer a novel approach for designing future spintronic devices based on similar antiferromagnetic networks.