Structural phase transitions between layered Indium Selenide for inte-grated photonic memory
Tiantian Li, Yong Wang, Wei Li, Dun Mao, Chris J. Benmore, Igor, Evangelista, Huadan Xing, Qiu Li, Feifan Wang, Ganesh Sivaraman, Anderson, Janotti, Stephanie Law, and Tingyi Gu

TL;DR
This paper demonstrates fast, reversible, and nonvolatile phase transitions between layered indium selenide structures using optical pulses, enabling potential applications in integrated photonic memory with low energy consumption.
Contribution
It introduces a novel method for rapid, reversible phase switching in layered In2Se3, leveraging atomistic transition pathways and broadband optical properties for photonic memory applications.
Findings
Reversible switching between alpha and beta In2Se3 structures achieved with nanosecond pulses.
Detailed atomistic transition pathways identified via high-resolution pair distribution function.
Broadband refractive index contrast and optical transparency characterized in thin films.
Abstract
The primary mechanism of optical memristive devices relies on the phase transitions between amorphous-crystalline states. The slow or energy hungry amorphous-crystalline transitions in optical phase-change materials are detrimental to the devices scalability and performance. Leveraging the integrated photonic platform, we demonstrate a single nanosecond pulse triggered nonvolatile and reversible switching between two layered structures of indium selenide (In2Se3). High resolution pair distribution function reveals the detailed atomistic transition pathways between the layered structures. With inter-layer shear glide and isosymmetric phase transition, the switching between alpha and beta structural states contain low re-configurational entropy, allowing reversible switching between layered structures. Broadband refractive index contrast, optical transparency, and volumetric effect in the…
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