Interfacial Polarization Switching in Al0.92Sc0.08N/GaN Heterostructures Grown by Sputter Epitaxy

TL;DR

This paper investigates the atomic-scale mechanisms of ferroelectric polarization switching in Al0.92Sc0.08N/GaN heterostructures grown by sputter epitaxy, revealing interfacial domain dynamics crucial for memory device development.

Contribution

It provides detailed atomic-level insights into polarization inversion and domain formation at the AlScN/GaN interface, advancing understanding of ferroelectric behavior in sputtered nitride heterostructures.

Findings

Atomic polarization inversion initiates at the interface.

Sharp polarization discontinuity identified at the heterostructure interface.

Residual M-polarity domains observed at the top electrode interface.

Abstract

The integration of ferroelectric nitride thin films such as Al1-xScxN onto GaN templates could enable enhanced functionality in novel high-power transistors and memory devices. This requires a detailed understanding of the ferroelectric domain structures and their impact on the electric properties. In this contribution, the sputter epitaxy of highly coherent Al0.92Sc0.08N thin films grown on GaN approaching lattice-matching conditions is demonstrated. Scanning transmission electron microscopy investigations reveal the formation of polar domains and the mechanism of domain propagation upon ferroelectric switching. Atomic resolution imaging suggests that polarization inversion is initiated by an interfacial switching process in which already the first atomic layer of Al1-xScxN changes its polarization from the as-grown M- to N-polarity. An atomically sharp planar polarization discontinuity is identified at the Al0.92Sc0.08N/GaN interface and described by atomic modeling and chemical structure analysis using electron energy loss spectroscopy, considering local lattice spacings. Moreover, residual domains with M-polarity are identified at the top Pt electrode interface. These insights on the location and the atomic structure of ferroelectric inversion domains in sputter deposited Al1-xScxN/GaN heterostructures will support the development of future non-volatile memory devices and novel HEMT structures based on ferroelectric nitride thin films via interface engineering.