Imaging van Hove Singularity Heterogeneity in Overdoped Graphene
Raymond Blackwell, Zengyi Du, Takuya Okugawa, Asish Kundu, Zebin Wu,, Ilya Drozdov, Angel Rubio, Dante Kennes, Kazuhiro Fujita, Abhay Pasupathy

TL;DR
This study investigates the spatial inhomogeneity of van Hove singularity doping in overdoped graphene using advanced microscopy and spectroscopy techniques, revealing local variations caused by Ytterbium intercalation and substitution.
Contribution
It demonstrates the spatial heterogeneity of van Hove singularity doping in graphene and links it to local Yb dopants and intercalation variations, providing insights into doping inhomogeneity effects.
Findings
Significant inhomogeneity in van Hove singularity position in overdoped graphene.
Local Yb dopants cause strong shifts in doping and quasiparticle renormalization.
Theoretical calculations confirm Yb impurities alter local electronic potential.
Abstract
Tuning the chemical potential of a solid to the vicinity of a van Hove singularity (vHS) is a well-established route to discovering emergent quantum phases. In monolayer graphene, the use of electron-donating metal layers has recently emerged as a method to dope the chemical potential to the nearest vHS, as evidenced by Angle-Resolved Photoemission Spectroscopy (ARPES) measurements. In this work, we study the spatial uniformity of the doping from this process using spectroscopic imaging scanning tunneling microscopy (SI-STM). Using molecular beam epitaxy (MBE), we achieve electron doping of graphene on SiC using Ytterbium (Yb-Graphene). We show using in-situ ARPES that the chemical potential is shifted to within 250 meV of the vHS. Using in-situ SI-STM, we establish that there exists significant inhomogeneity in the vHS position in overdoped graphene. We find two separate reasons for…
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Taxonomy
TopicsGraphene research and applications · Carbon Nanotubes in Composites · Electron and X-Ray Spectroscopy Techniques
