Floquet-Volkov interference in a semiconductor
Changhua Bao, Haoyuan Zhong, Benshu Fan, Xuanxi Cai, Fei Wang, Shaohua, Zhou, Tianyun Lin, Hongyun Zhang, Pu Yu, Peizhe Tang, Wenhui Duan, Shuyun, Zhou

TL;DR
This study demonstrates the experimental observation of Floquet-Volkov interference in black phosphorus, revealing asymmetric spectral modulation controlled by light polarization, which advances understanding of light-matter interactions at ultrafast timescales.
Contribution
It provides the first experimental evidence of Floquet-Volkov interference in a semiconductor, showing controllable asymmetric spectral modulation via pump polarization.
Findings
Asymmetric spectral weight modulation observed in Floquet-Volkov states
Control of interference asymmetry through pump polarization rotation
Insights into quantum interference of light-field dressed electronic states
Abstract
Intense light-field can dress both Bloch electrons inside crystals and photo-emitted free electrons in the vacuum, dubbed as Floquet and Volkov states respectively. These quantum states can further interfere coherently, modulating light-field dressed states. Here, we report experimental evidence of the Floquet-Volkov interference in a semiconductor - black phosphorus. A highly asymmetric modulation of the spectral weight is observed for the Floquet-Volkov states, and such asymmetry can be further controlled by rotating the pump polarization. Our work reveals the quantum interference between different light-field dressed electronic states, providing insights for material engineering on the ultrafast timescale.
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